Abstract
This paper presents an exhaustive analysis of MOSFET with L shaped dielectric pocket in its channel region. 2D device simulation using Silvaco ATLAS has been used for the comprehensive analysis of MOSFET with L shaped dielectric pocket at the source-channel and channel-drain interface. This has been done to investigate its suitability for nano scale applications. Results obtained through device simulations reveal that the MOS with L-shaped dielectric pocket has significant enhancement over MOS without pocket for threshold voltage enhancement, leakage reduction and sub-threshold swing. Further, gate to drain capacitance (Cgd) and gate to bulk capacitance (Cgb) see significant reduction. The simulation results for device parameters such as sub threshold swing (SS) and ON to OFF current ratio (Ion/Ioff) shows that MOSFET's with dielectric pocket have higher immunity against Short Channel Effects (SCEs) in comparison to MOSFET's without pocket.
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