Abstract
The gate forward leakage current in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is investigated. It is known that the gate forward leakage current reduces as effective electron barrier height (qϕb) grows. Therefore, an energy-band modulation (EBM) technology using fluorine-plasma treatment or P-type doping is presented to introduce the negative fixed charges into AlGaN layer. The introduced negative fixed charges can modulate the conduction-band profile in AlGaN layer, resulting in higher effective electron barrier. An analytical model is proposed to illustrate the conduction-band profile. It is suggested that as introduced negative fixed charge concentration exceeds a critical value, an additional electron barrier (qΔϕb) is achieved, contributing to reducing the gate forward leakage current. Based on this theory, the fluorine-plasma treatment is implemented to carry out EBM technology in this work. Experimental results confirm that the additional electron barrier qΔϕb of 0.3eV is obtained for the fluorine-plasma treatment condition of 60W and 120s. Thus, the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without fluorine-plasma treatment. The analytical results are in good agreement with numerical simulation and experiment results.
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