Abstract
Stress from the overlay conductor patterns in ion-implanted magnetic bubble memory devices has been investigated using computer simulations (Boundary Element Method). In the case of the conventional SiO2 spacer which lays under the conductors, the concentrated stress at the edge of the conductors is transferred to the garnet directly. In order to reduce the stress, an elastically ‘‘soft’’ material, such as polyimide, was introduced as the spacer. The simulation shows that the stress under the polyimide spacer is reduced to about 1/3 of that under the SiO2 spacer. This is caused both by the internal stress relaxation in the conductors themselves and by the stress dispersion effect of polyimide. The devices with the polyimide spacer were evaluated and showed no influence of the conductor stress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
