Abstract
In the development of semiconductors, power devices have more and more applications. In addition to today's popular PC and smartphone. LED energy-saving development must rely on the power devices. In this study, the design direction is focused on 200 V power devices. In addition, this device can be used in consumer electronics products, and it will be the next focused design points to be improved. The same production process technology is applied on fabricating the devices in the silicon substrate and the SOI substrate to explore the difference between both devices in the electric potential, electric field, the depletion region and breakdown voltage.
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