Abstract
This paper investigates a specific current saturation phenomenon in high-voltage LDMOS (lateral double-diffused MOS) transistors, i.e., the quasi-saturation effect. By means of simulation tool TCAD, we clarified that the physical mechanism of quasi-saturation effect is the carrier velocity saturation in the drift region. Further more, with the concept of intrinsic drain voltage Vk, a mathematical model is derived to describe the current saturation effect in LDMOS transistors. The proposed model has been primarily validated by Matlab program and exhibites excellent accuracy, speed and scalability. This model can be further implemented in SPICE circuit simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
