Analysis and design of low‐power and high‐gain complementary metal oxide semi‐conductor low noise amplifier operating at 28 GHz frequency for millimeter wave LEOS, local multiport distribution system and radar application

Abstract

AbstractLow‐noise amplifier supports broadband standards with the advantage of low‐power, high‐gain, and low noise figure (NF). The low‐frequency design of this low‐noise amplifier (LNA) is used for multistandard wireless applications and the high‐frequency design of this LNA can be used in millimeter wave radar applications. This LNA is designed at the front‐end for amplification in the receiver side, so that signal to noise is adjusted on the multistandard receivers. LNA permits performance of the design with various parameters like NF, power efficiency, gain of the LNA, figure of merits, and linearity of the low‐noise amplifier. In 28 GHz, millimeter wave (mmW) circuits' design and analysis with high gain, low power, low NF, and wide bandwidth are preferred for radio frequency front end. This paper discusses, the Cascode design of CMOS LNA circuit at 28 GHz, and the novelty of the design is that it can operate at two different set of frequency bands (21 and 28 GHz) and it is multiband and multitunable. The design's conversion gain (S21) of 17.4 dB, NF of 4 dB, stability of 1, power optimized to 22.3 mW, and area of 0.399mm2 are reported. The input and output reflection coefficients are S11 ≤ −10 dB and S22 ≤ −10 dB. Electromagnetic simulation is performed using advanced design system tool. Output power of the proposed design is 2 dBm, transition frequency (fT) is 64GHz, and maximum operating frequency (fmax) is 96GHz. The observed results show that the proposed CMOS LNA design finds its suitability in mmW cloud radar application of mono‐pulse radar system and radar front‐end receiver circuits.