Abstract
We propose combined distributed-feedback/Fabry-Perot (DFB/FP) structures for surface-emitting semiconductor lasers. The analysis is based on coupled-wave equations modified for surface-emitting lasers. The proposed structures, which exhibit enhanced resonance due to a matching between the gain and field distributions resulting in a reduced threshold compared with simple FP structures, are formed by placing the DFB structure between two DBR mirrors of an FP resonant cavity and introducing phase layers between the DFB region and the mirrors. It was found that the periodic-gain structures are a special case of the combined DFB/FP structures in which the index coupling effect is assumed to be negligible due to a small fill factor or a small refractive-index difference. The effect of complex (gain and index) coupling on the design and the threshold characteristics of the structures is clearly illustrated. Some important design considerations that were neglected in the previous papers are addressed.
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