Abstract
In this paper, we investigate the optimal design of combined distributedfeedback/Fabry-Perot (DFB/FP) structures for vertical cavity surface-emitting semiconductor lasers (VCSELs) using a self-consistent model based on coupled-wave equations and on the dependence of gain coupling on the threshold gain. Numerical results, carried out for the GaInAsP/InP material system, confirmed that a much lower threshold current density can be achieved in VCSELs with optimally designed DFB/FP structures. The results thus imply that a potential exists for realizing lower threshold VCSELs with technologically feasible mirror reflectivities and cavity lengths.
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