Abstract
AbstractIn this article, resistive mixers using AlGaN/GaN high electron‐mobility transistor (HEMT) devices are examined. Models of the GaN devices in linear region were created. Behavior of conversion loss with LO power is well predicted using the developed model. Three down‐conversion mixers were designed for RF frequency of 1.7 GHz and IF frequency of 200 MHz using LO frequency of 1.9 GHz. GaN HEMT devices with gate width of 300 μm, and gate lengths of 1.2, 1.0, and 0.75 μm were used in the mixers. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1152–1154, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22390
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