Abstract
This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz. The LNA is designed using multiple bandwidth expansion methods, including cascode, resistance feedback, and cascode Darlington amplifier. The amplitude-frequency characteristics and bandwidth expansion principle of the three structures are studied theoretically based on the small-signal equivalent circuit model. Thanks to these techniques, a three-stage LNA is designed in a 0.15-μm GaAs pseudomorphic high-electron-mobility (pHEMT) process. The measured results show that the designed LNA achieves an average gain of 21.6 dB in 2-40.5 GHz while maintaining a noise figure (NF) below 3.6 dB. The measured output 1-dB gain compression point (OP1 dB) is from 4.5 to 12.8 dBm and the input/output return loss are better than 5 dB. The chip area is only 1.57 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , including input and output test pads.
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