Abstract
A new MOS-gated power transistor, the Hybrid Schottky INjection Field Effect Transistor (HSINFET), is described in this paper. The fabrication process is similar to that of an LDMOS transistor but with the high-low (n+n-) ohmic contact at the drain replaced by a parallel combination of a Schottky barrier and a pn junction diode. This device provides a current handling capability 3.5 times larger than that of the LDMOS transistor but still maintains a comparable switching speed. The forward conduction characteristics of the HSINFET are investigated and modeled using two-dimensional numerical simulations. Experimental results comparing the HSINFET with the LDMOST, Lateral Insulated Gate Transistor (LIGT), and Schottky INjection Field Effect Transistor (SINFET), on the basis of current handling capability and switching speed, are given.
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