Abstract
The basic physics of the steady-state characteristics of the lateral insulated gate transistor (LIGT) is discussed. Results from a tWo-dimensional computer simulation Of representative LIGT structures are presented. Several Structural and process enhancements to the basic LIGT structure to increase the current handling capability and suppress latchup are pointed out. Experimental results of the steady-state characteristics of a variety of LIGT test structures are presented and analyzed. The static latching aspect of LIGT is discussed insome detail. LIGT devices employing either a buried layer or surface shorts are shown to current limit rather than latching up.
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