Abstract
The dissolution characteristics of poly(hydroxystyrene)-based, chemically amplified (CA) photoresists for the deep uv are examined. It is shown that recently reported characteristics 1 found in DNQ/novolac-based conventional resists are also present in PHS-based, CA resist, including the so-called development notch and the variation of dissolution characteristics as a function of depth into resist film. Inclusion of these anomalies into the development step of the optical lithography simulator, PROLITH/2 2, gives improved simulation accuracy. Simulation of CA e-beam resists 3 which utilise the same chemistry should also benefit from the improvements described.
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