Abstract
This paper presents a discussion on the development of i-line resist chemistry as anticipated by the future technology and the needs of the new exposure tools. Commercially available high numerical aperture (NA) and low NA wide field i-line steppers stand to gain in throughput as the resist photospeed is increased. However, the advantages of developing 50 mJ/cm 2 or faster resist products capable of less than 0.3 μm resolution is not clear at the present time. Future development of i-line scanners and greater demands on throughput may give rise to the need for such products. Conventional novolak based / diazonaphthoquinone (DNQ) resist chemistry is not capable of providing such performance. Chemically amplified (CA) resist products employed in deep ultra violet (DUV) regime demonstrated the capability of this chemistry to deliver high resolution and photospeed performance. If such a performance is to be needed in i-line, then CA i-line resist chemistry would be the technology of choice. Significant resist cost reduction is possible if i-line transparent phenolic resins, such as novolaks , can be used replacing expensive poly-hydroxystyrene (PHS) base polymers that are necessary to used in DUV resist products.
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