Analyses of I-V curve hysteresis in perovskite solar cells using circuit simulator

Abstract

We have analyzed current–voltage (I-V) hysteresis curves of perovskite solar cells by an equivalent circuit using a circuit simulator in order to quickly certificate cell performances. A circuit model that added a sub-diode with a large saturation current and a reverse diode to the basic equivalent circuit of a solar cell showed a typical I-V hysteresis curve by setting the junction capacitance of the reverse diode. Furthermore, the simulated I-V curves are in good agreement with the peculiar experimental curves where the maximum power point current density (Jpmax) is higher than the short circuit current density (Jsc) due to the setting of the sub-diode diffusion capacitance. Based on the equivalent circuit model, we have proposed a hysteresis-inducing cell structure in which the grains and grain boundaries of the perovskite film form the main diode of the solar cell and the sub-diode with a large saturation current, respectively.