Abstract
In this paper, analog/RF performance of source side only dual-k spacer (Dual-kS) trigate junctionless transistor (JLT) is investigated with respect to the parametric variations. It is observed that the Dual-kS JLT improves analog/RF figure of merits (FOMs) and shows its lower dependence to the parametric variations compared with the conventional (low-k spacer) JLT. This study reveals that the design of Dual-kS JLT with lower aspect ratio (1–3) improves the analog FOMs with moderate frequency of operations at fin-width of 10 nm with gate length being 20 nm. Moreover, the frequency of operation can be increased further by increasing the aspect ratio (4–6) without sacrificing the analog FOMs such as transconductance (gm), output conductance (gds) and intrinsic voltage gain (AV0). It is also reported that gds of Dual-kS JLT is least sensitive to the variation in fin-width, doping concentration and oxide thickness, which proves the potential of Dual-kS device to act as a constant current source. Moreover, Dual-kS device is found to be robust against the variation in doping concentration and oxide thickness, which further improves the merit of Dual-kS JLT for low-voltage/low-power analog/RF applications.
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