Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs

M Emam,J.-P Raskin,D Vanhoenacker-Janvier,F Danneville,M A Pavanello

doi:10.1109/essderc.2009.5331397

Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs

M Emam, J.-P Raskin + Show 3 more

https://doi.org/10.1109/essderc.2009.5331397

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Publication Date: Sep 1, 2009

Citations: 3

Affiliation: Université Catholique de Louvain, Institute of Electronics, Microelectronics and Nanotechnology

#RF Behaviors #Graded Channel Devices + Show 8 more

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Abstract

The DC, analog and RF behaviors as well as the nonlinear characteristics are shown for the first time for submicron graded channel partially depleted SOI MOSFETs. Previously reported advantages of long graded channel devices are extended for downscaled submicron graded channel devices presented in this work. These advantages cover all aspects of operation, being DC, analog, RF and nonlinear performances, which are investigated in comparison with classical MOS devices. These results are confirmed through robust measurements and accurate characterization techniques supported by well established extraction methods, especially for RF and nonlinear regimes of operation.

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