Analog Resistive Switching in Reduced Graphene Oxide and Chitosan‐Based Bio‐Resistive Random Access Memory Device for Neuromorphic Computing Applications

Abstract

Bio‐resistive random access memory (Bio‐RRAM) devices are important because they are biocompatible and biodegradable. Herein, analog unipolar resistive switching and bipolar resistive switching in chitosan and reduced graphene oxide + chitosan (RGO+chitosan)‐based Bio‐RRAM devices are demonstrated, respectively. Endurance and retentivity of the Ag/RGO+chitosan/FTO‐based Bio‐RRAM device demonstrate good stability and nonvolatile in nature. Conductive atomic force microscope measurements infer the formation of the 1D conduction channels in the device, which further confirms the conduction channel mechanism in the RGO+chitosan‐based Bio‐RRAM device. Further, synaptic learning rules such as long‐term potentiation (LTP), long‐term depression, and spike time‐dependent plasticity on Ag/RGO+chitosan/FTO‐based device are also demonstrated. Estimated relaxation time infers more time for forgetting than learning. These results suggest that Ag/RGO+chitosan/FTO synaptic Bio‐RRAM device would indeed be a potential candidate for future neuromorphic computing applications.