Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation

Abstract

The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on-insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance.