Abstract
This work presents an analysis of the analog performance of SOI FinFET devices and the impact of different TiN metal gate electrode thickness. Thinner TiN metal gate allows achieving large gain in spite of the reduced variation observed on gm/IDS characteristics. This effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. This VEA enhance suggests an increase of the transversal electrical field for thin TiN metal gate (reduced effective oxide thickness - EOT) that is confirmed with the increment of the GIDL current. This impact on the voltage gain is maintained for short channel length.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
