Abstract
In this work, we investigate the impact of post-deposition nitridation of the MOCVD HfSiO gate dielectric and the TiN gate electrode thickness on the electrical parameters of SOI multiple-gate FETs (MuGFETs). It is shown that nitridation reduces the EOT, enhances the gate leakage current and reduces the mobility. Although, HfSiON gate dielectric can reduce the work function (WF) sensitivity on the TiN metal gate electrode thickness.
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