Analog performance of dual-material gate InGaAs MOSFETs

Abstract

Owing to large electron mobility, InGaAs MOSFETs show great promise for future high performance logic applications. Large dielectric constant of InGaAs, however, causes enhanced electrostatic coupling between the source and the drain that results in more pronounced short channel effects (SCEs), which in turn degrades the analog performance of such devices. A detailed investigation, with the help of a numerical device simulator, of the effects of using a dual-material gate (DMG) in such devices on its analog performance is reported for the first time in this paper. DMG devices are found to outperform their single-material gate counterparts in terms of transconductance, transconductance-to-drain current ratio, output conductance, intrinsic voltage gain, and unity-gain cut-off frequency.