Abstract
The performances of the single-transistor operational transconductance amplifiers (OTAs) implemented using graded-channel (GC) and a conventional fully depleted silicon-on-insulator nMOSFETs are compared. Improvements of the DC gain and unity-gain frequency resulting from the extremely reduced output conductance and the increased transconductance in the GC devices are discussed, based on experimental results, establishing design guidelines in order to aim at GC micropower or wide bandwidth OTAs.
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