Abstract
This paper depicts the analog investigation of a Novel Stacked Oxide Top Bottom Gated Junctionless (TBG-JL) Fin-shaped Field Effect Transistor (FinFET) structure. The structure is designed in this way to enhance the switching performance and curtail the Short Channel Effects (SCEs). The study is done on Silvaco Atlas TCAD tools for the Novel Stacked Oxide FinFET device and analyzed against Top-Bottom Gated Junctionless FinFET and Traditional FinFET. The Novel device shows 280 times improvement in switching ratio when stacked against the Traditional JL FinFET at identical gate length at room temperature (300K). The results from device simulation affirm that the Novel device has better analog performance over Traditional Junctionless FinFET and diminishes the Short Channel Effects (SCEs) a cut above the Traditional Junctionless FinFET.
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