Analog Operation and Harmonic Distortion Temperature Dependence of nMOS Junctionless Transistors

Abstract

This paper compares the analog parameters of the multiple gate Junctionless transistors with the ones presented by classical inversion mode Trigate devices from 473 K down to 223 K. The transconductance to the drain current ratio (gm/IDS), the Early voltage (VEA) and the intrinsic voltage gain (AV) have been evaluated for both Junctionless and inverse mode devices with different fin widths. Also, the non-linearity of this novel architecture is studied in terms of the total and the third order harmonic distortions (THD and HD3, respectively) both at a fixed input voltage and at a targeted output swing. According to the study, the drain current of Junctionless transistors have exhibited lower temperature dependence with gm/IDS at moderate/strong inversions and their AV increase with the temperature, whereas the maximum AV of Trigate devices is obtained at room temperature. Junctionless also present better THD and HD3 with respect to the classical Trigate transistors.