Analog characteristics of drain engineered submicron MOSFETs for mixed-signal applications

Abstract

Drain engineered MOSFETs are compared in terms of their impact on analog performance for submicron mixed-signal applications. The high energy implanted lightly doped drain (LDD) devices are shown only to improve voltage gain at high drain voltage, while large-angle-tilt implanted drain (LATID) devices show that the reduced substrate current and junction depth due to the tilt angle implant can significantly improve maximum available gain and voltage swing. Also, superior analog hot-carrier immunity in LATID MOSFETs is demonstrated through offset voltage drift in source-coupled transistor pair. These results suggest that LATID technology is promising for applications to submicron mixed analog/digital circuits.