Analog and RF Performance Analysis of a Junctionless Electrically Induced Source/Drain Extension Cylindrical Surround Gate (JLEJ-CSG) MOSFET

Abstract

Junctionless (JL) transistors have recently been reported as strong candidate for the future technology nodes because of ease of manufacturing and improved performance over conventional MOSFETs. In this paper, the analog and RF performances of a JL transistor have been evaluated with metal gate structure having higher work function in the middle with two side gates of lower work function (electrically induced source/drain junctions, EJ). This triple metal gate JLEJ cylindrical surrounding gate (CSG) MOSFET provides better response in terms of intrinsic gain, transconductance generation factor, early voltage, unity gain transition frequency, maximum frequency of oscillation, etc. over single metal junctionless cylindrical surrounding gate (JLSM) transistors. However, the analog and RF performance metrics have been observed to be degraded because of quantum mechanical effects. The ION/IOFF ratio is improved by more than 105 times.