An X-ray investigation of growth and deformation faults in a vapour grown 2H SiC crystal

Abstract

Single crystals of 2H SiC grown by hydrogen reduction of methyltrichlorosilane at 1400°C frequently contain a high concentration of random stacking faults in their hexagonal closepacked | AB | AB | … structure. This given rise to diffuse streaks along reciprocal lattice rows parallel to the c ∗ axis for h − k ≠ 0 mod 3. To investigate the nature of stacking faults in these crystals, the intensity distribution along the 10. l reciprocal lattice row of a 2H SiC crystal was recorded on a 4-circle computer-controlled single crystal diffractometer. The halfwidths of 10. l reflections with l even and l odd were found to be 0.36 and 0.24 reciprocal units respectively. It is observed (i) that the 10. l reflections with l even are highly broadened and (ii) that the halfwidths of l even and l odd reflections are in the ratio of 3 : 2. This suggests that the stacking faults present are predominantly growth and deformation faults. Since the fault concentration is very high, exact theoretical expressions for the halfwidths of 10. l reflections were used to calculate the growth and deformation fault probabilities (α and β) from the observed half widths, without neglecting the second and higher order terms in α and β. It is found that α = 0.11 and β = 0.20. The deformation fault probability (β) is surprisingly high for hard and brittle material like SiC which does not undergo plastic deformation easily. It is suggested that several deformation fault configurations have resulted from a clustering of growth faults.