Abstract
This paper presents the design of a low-noise amplifier (LNA) with high gain and low noise figure (NF), targeting the X-band, in 0.25 mum SiGe BiCMOS process provided by IHP. Simulation results show that at 10 GHz, the proposed LNA has a noise figure of 2.295 dB, with both input and output impedances matched to 50 Omega, an input return loss of -30.22 dB, an output return loss of -17.02 dB, and a voltage gain of 20.74 dB while dissipating 7.5 mW power from a 2.5 V power supply. The circuit occupies a chip area of 590 times 765 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
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