Abstract
An RuO 2/TiO 2(110) ultrathin film, epitaxially grown in ultrahigh vacuum by reactive deposition of Ru 3(CO) 12 in an oxygen atmosphere (2×10 −6 mbar) at 300°C, has been characterised by means of X-ray photoelectron diffraction (XPD) measurements coupled to multiple-scattering (MS) simulations. Comparison of the overlayer Ru 3d 5/2 and the clean substrate Ti 2p 3/2 2 π plots gives direct evidence for an RuO 2 overlayer well ordered in the short range, with the rutile structure (typical of both the underlying substrate and bulk RuO 2) which continues the (110) stacking of the substrate in a single orientational domain. The presence of a sharp low-energy electron diffraction (LEED) pattern, identical to that of the clean substrate, proves the extension of the translational order to the long range and suggests a pseudomorphic growth. Multiple-scattering calculations of the diffraction pattern lead to a detailed quantification of the thin film relaxation.
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