Abstract

Optimized growth of Silicon Oxynitride (Si4O5N3) has been obtained in ultrahigh vacuum and growth conditions are confirmed by observing the low-energy electron diffraction (LEED) patterns and Auger electron spectroscopy (AES). All the steps to produce the perfect Si4O5N3 are clarified separately. Specially, initial Si, time for deposition, nitridation and oxidation are crucial points for getting the clear LEED pattern. By observing the LEED patterns and according to the suggestions of previous report to get ideal insulator and SiC interface, we are expecting that the surface is free from the extra-Si or the least amount of Si remains which can be confirmed by scanning tunneling microscopy (STM).

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