Abstract

In this paper, an ultra-low-power integrated RF front end for multi-standard is proposed. It contains a current-reuse low-noise amplifier (LNA) and a single-balanced mixer. The double resonances network helps to achieve a good input impedance matching in the required band and suppress out-of-band noise. The stacked common source (CS) LNA is adopting current-reuse of the two amplifier stages and re-using bleeding current of the mixer, which save working current considerably. By employing forward body bias technique, the proposed circuit can operate at a reduced supply voltage. In addition, the local oscillator (LO) signal forward body bias technique improves the transistors’ switching characteristic, which optimizes noise figure (NF) and linearity performances simultaneously. Fabricated in the chartered 0.18-μm RF CMOS technology, the S11 of the front-end is below −14 dB in 935~960 MHz, below −11 dB in 1805~2483 MHz. It achieves a conversion gain of 18.6~20.8 dB, the double sideband (DSB) NF of 2.3~5.1 dB. The IIP3 are −8.2 dBm at 935 MHz and −9.8 dBm at 2100 MHz. It consumes 2.1 mA from a 1 V supply voltage and occupies an active area of only 0.61 × 0.53 mm2.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.