Abstract
This study developed a novel 4H-SiC vertical MOSFET device structure named double-epitaxial MOSFET (DEMOSFET). In the structure, the p-well is composed of two p-type epitaxial layers, while an n-type region between the p-wells is formed by low-dose n-type ion implantation, A buried channel is formed at the surface of the upper p - epitaxial layer. A fabricated DEMOSFET showed an on-resistance of 8.5 mΩcm 2 at a gate voltage of 15 V when a blocking voltage is 600 V. The simulation results revealed that the characteristics largely depend on the profile of the nitrogen in the n-type region between the p-wells.
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