An Ultra-fast Multi-level MoTe<inf>2</inf>-based RRAM

Abstract

We report multi-level MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> phase transition. Different from conventional RRAM devices based on ionic migration, the MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Multi-level stable states and synaptic devices were realized in this work, and operation of the devices in their low-resistive, high-resistive and intrinsic states was quantitatively described by a novel model.