Abstract
We report multi-level MoTe 2 based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2H d phase transition. Different from conventional RRAM devices based on ionic migration, the MoTe 2 -based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe 2 -based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Multi-level stable states and synaptic devices were realized in this work, and operation of the devices in their low-resistive, high-resistive and intrinsic states was quantitatively described by a novel model.
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