Abstract
An ultra-high-speed optoelectronic integrated receiver consisting of a GaInAs p-i-n photodiode and a transimpedance AlInAs-GaInAs high-electron-mobility-transistor amplifier was successfully fabricated on an InP substrate. A 3-dB bandwidth of 6 GHz with a transimpedance of 50 dB Omega was achieved for the receiver with a feedback resistance of 750 Omega . Measured noise currents of the receiver were analyzed and found to be dominated by the low-frequency noise and the induced gate noise. A sensitivity of -21.2 dBm for 8.0-Gb/s NRZ signals was deduced from the noise current characteristics.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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