Abstract
This paper presents a novel radiation monitor that is based on a custom static random access memory (SRAM) application-specified integrated circuit. Its sensitivity is adjustable through its core supply voltage and the radiation monitoring is based on the upset rate that is measured during a measurement interval in the memory. The sensor has different supply voltages for the SRAM core and the interface logic to prevent incorrect digital signals during the measurement cycle. The memory was processed in a 0.18- $\mu \text{m}$ CMOS technology and was tested with heavy ions with an linear energy transfer from 1.8–60 MeV $\cdot $ cm2/mg, 24-GeV protons, and a mixed radiation field. The memory cells were also verified with a two-photon absorption laser. Furthermore, an analysis was made on single-event upsets and multibit upsets.
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