An SOI LTIGBT With Self-Biased pMOS for Improved Short-Circuit Property and Reduced Turn-Off Loss

Abstract

A novel silicon on insulator (SOI)-lateral trench insulated gate bipolar transistor (LTIGBT) featuring a self-biased pMOS (SBP), named SBP-LTIGBT, is proposed and investigated. The gate and drain of SBP are shortly connected with emitter electrode, and the source is connected with the P-buried, which introduces automatically turn-off and turn-on function. At the forward conduction state, the SBP is turned off when <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{GS,\textit{P}}} &gt; \textit{V}_{\text{TH,\textit{P}}}$</tex-math> </inline-formula> , and the SBP-LTIGBT shows the same electrical characteristics as conventional LTIGBT. The SBP is automatically turn-on with reduced saturation current when <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{GS,\textit{P}}}&lt;$</tex-math> </inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{TH,\textit{P}}}$</tex-math> </inline-formula> . At the switching state, the SBP is always turned on to accelerate the extraction of the excessive carriers; consequently, the turn-off loss <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{E}_{\text{OFF}}$</tex-math> </inline-formula> is reduced. As a result, the tradeoff relationship between forward conduction voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{ON}}$</tex-math> </inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{E}_{\text{OFF}}$</tex-math> </inline-formula> is largely improved. The short-circuit tolerance time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{T}_{\text{SC}}\text{)}$</tex-math> </inline-formula> of the SBP-LTIGBT is 10.5 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula> s, which is extended by 3.4, 2, and 1.4 times longer than that of LTIGBT with triple-RESURF (TR-LTIGBT), LTIGBT with double-RESURF (DR-LTIGBT), and conventional LTIGBT (C-LTIGBT), respectively. Furthermore, when <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{V}_{\text{ON}}$</tex-math> </inline-formula> is 1.4 V, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\textit{E}_{\text{OFF}}$</tex-math> </inline-formula> of the SBP-LTIGBT is 0.36 mJ/cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> , which is reduced by 73%, 60%, and 51% than that of C-LTIGBT, DR-LTIGBT, and TR-LTIGBT, respectively.