Abstract
The study adopts a monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) applied in S-band was designed using ADS simulation software, GaAs 0.15-um pseudomorphic high electron mobility transistor (pHEMT) process. The LNA small signal gain is greater than 30.8 dB, gain flatness is ±0.45 dB, noise coefficient is less than 1.5 dB, input and output return loss is greater than 10 dB, and the chip area is 1.2*2.4 mm2. The low noise amplifier is composed of a two-stage cascade structure. Gain flatness, gain control, and bandwidth broadening are improved by RLC negative feedback network. The minimum noise coefficient circle and maximum gain circle are narrowed by adding negative feedback to achieve better noise coefficient and gain.
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