Abstract
Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel quantum devices. Among the possibilities in the solid state, a NV defect center in diamond stands out for its robustness—its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. In this paper, we illustrated the formation kinetics of NV centers in diamond and their transformation from one charge state to another. The controlled scaling of diamond NV center-based quantum registers relies on the ability to position NV defect centers with high spatial resolution. Ion irradiation technique is widely used to control the spatial distribution of NV defect centers in diamond. This is addressed in terms of energetics and kinetics in this paper. We also highlighted important factors, such as ion struggling, ion channeling, and surface charging, etc. These factors should be considered while implanting energetic nitrogen ions on diamond. Based on observations of the microscopic structure after implantation, we further discussed post-annealing treatment to heal the damage produced during the ion irradiation process. This article shows that the ion implantation technique can be used more efficiently for controlled and efficient generation of NV color centers in diamond, which will open up new possibilities in the field of novel electronics and computational engineering, including the art of quantum cryptography, data science, and spintronics.
Highlights
For many years, scientists have been looking for ideal candidates to use as information carriers qubits for quantum computation and communications [1,2,3]
Because the ion implantation process can be integrated with lithography, it will be possible to implant a single NV color center or NV optical centers in a designed form with other structures such as microcavities, nano-photonics, and micro-circuits on a chip
There is a considerable lag in collective approaches with respect to the overall production kinematics of NV centers by ion implantation technique, identifying the hidden problems behind the slow progress in obtaining high quality NV color centers in diamond, and finding out proper solutions to eliminate those obstacles
Summary
Scientists have been looking for ideal candidates to use as information carriers qubits for quantum computation and communications [1,2,3]. The nitrogen-vacancy (NV) color centers become the most promising candidates because they exhibit atom-like properties, such as long-lived spin quantum states and a well-defined optical transition in solid state devices [5] These kinds of point defects are promising for a number of applications such as quantum state engineering [6], and magnetic sensors [7]. There is a considerable lag in collective approaches with respect to the overall production kinematics of NV centers by ion implantation technique, identifying the hidden problems behind the slow progress in obtaining high quality NV color centers in diamond, and finding out proper solutions to eliminate those obstacles For these reasons, we thoroughly studied the progress in this field, identified the technological impediments and proposed some indigenous solutions. We suggested some of the improvement strategies for obtaining high quality NV centers in diamond by ion implantation for efficient devices
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