Abstract
Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
Highlights
With the fast development of electrical power, industrial control, automotive electronics, and consumer electronics industries, there is a huge demand for high-performance power semiconductor devices
It is worth noting that a lot of studies on the Ga2O3 material growth and power device fabrication and characterization have been carried out in the last several years, so in this paper, we reviewed the material properties of the ultrawide bandgap Ga2O3 semiconductor and the investigations of the Ga2O3-based Schottky barrier diode (SBD) for power electronics application
Sasaki et al in Tamura Corporation fabricated SBD based on high-quality (010) β–Ga2O3 single-crystal substrate grown by floating zone method [62]
Summary
With the fast development of electrical power, industrial control, automotive electronics, and consumer electronics industries, there is a huge demand for high-performance power semiconductor devices. Ga2O3 single crystal, monoclinic β-Ga2O3 is the most stable, and it has an ultrawide bandgap (Eg~ 4.8 eV) and very high breakdown electric field (Ebr~ 8 MV cm−1), compared to the traditional Si and later developed SiC and GaN material. For the growth of single-crystal β-Ga2O3 substrate, there are easy, low-cost, and mass-producible melt-growth methods at atmospheric pressure, such as floating zone (FZ) [12, 13] and the edge-defined film-fed growth (EFG) [14–17]. This is another superiority of Ga2O3 in the aspect of high-quality single-crystal growth, compared with SiC and GaN. In SBD, the most important performance parameters are breakdown voltage (Vbr) and on-resistance (Ron), so through summarizing and comparing the various methods for improving the Vbr and Ron performances, we wish our reviewing work is
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