Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown $\beta$-Ga2O3

Abstract

$\beta$ -Gallium oxide (Ga 2 O 3 ) has seen tremendous activity recently for power device and RF applications due to its high Baliga's figure of merit (BFoM) and Johnston Figure of Merit (JFoM), both of which rely on its high critical field strength (6–8 MV/cm). Schottky diode devices are widely used in power electronics circuits in addition to power transistors. High breakdown voltage and high current rating Schottky diodes have been reported by several groups. In this work, we report an improved field plate design for Ga 2 O 3 Schottky diodes with atomic layer deposited SiO 2 . Non-field plate diodes show an area dependence for the breakdown voltages, while no such dependence is seen for field plated devices. Pt/Au diodes with field plates show a breakdown voltage of ~ 1.1 kV which is comparable to other reports.