Abstract
A True Random Number Generator is an essential component in data encryption, hardware security, physical unclonable functions, and statistical analyses. Conventional CMOS devices usually exploit the thermal noise or jitter to generate randomness, which suffers from high energy consumption, slow bit generating rate, large area, and over-complicated circuit. In this mini review, we introduce the novel physical randomness generating mechanism based on the stochastic switching behavior of magnetic tunnel junctions. As compared to CMOS technologies, the random number generator based on spintronic devices can have many inherent advantages, such as simpler structure, compact area, higher throughput, and better energy-efficiency. Here, we review and compare various existing schemes at the device and circuit levels to achieve high performance magnetic tunnel junctions based on a True Random Number Generator. Future research trends and challenges are also discussed to stimulate more works in this area.
Highlights
Random numbers play a crucial role in modern information technology
2014, another True Random Number Generators (TRNG) based on the spin transfer torque (STT) mechanism was designed and simulated by Won Ho Choi et al [33]
The experimental test upon SP-magnetic tunnel junction (MTJ) over a 10-s period shows that the dwell times of both AP and P status follow a Poisson characteristic and the mean switching frequency is 1.66 kHz
Summary
Zhenxiao Fu 1, Yi Tang 2*, Xi Zhao 2, Kai Lu 3, Yemin Dong 3, Amit Shukla 1, Zhifeng Zhu 1 and Yumeng Yang 1*. Conventional CMOS devices usually exploit the thermal noise or jitter to generate randomness, which suffers from high energy consumption, slow bit generating rate, large area, and over-complicated circuit. In this mini review, we introduce the novel physical randomness generating mechanism based on the stochastic switching behavior of magnetic tunnel junctions. As compared to CMOS technologies, the random number generator based on spintronic devices can have many inherent advantages, such as simpler structure, compact area, higher throughput, and better energy-efficiency. We review and compare various existing schemes at the device and circuit levels to achieve high performance magnetic tunnel junctions based on a True Random Number Generator.
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