An Overview of Current Trends in Hafnium Oxide–Based Resistive Memory Devices

Abstract

Nonvolatile memory (NVM) can preserve the stored information for a long duration without supplying power. An ideal NVM should have the following properties: (i) simple structure, (ii) high operation speed, (iii) low cost, (iv) nondestructive readout, (v) small size, (vi) high endurance, (vii) low operation voltage, (viii) long retention time, etc. A perfect NVM that fulfills all the properties mentioned has not been available until now. In the current scenario, market trends are changing toward Internet of Things, mobile and machine learning applications, which create new opportunities for NVMs. This chapter extensively reviews recent developments in HfO2-based resistive random access memory (RRAM) technology. The RRAM devices based on HfO2 are believed to be the most extraordinary evolving memory technologies due to their superior speed and cheap cost, excellent scalability, increased storage capacity and future applications in diverse fields. First, a quick overview is provided in the area of evolving memory technology. The materials used in RRAM, the method for resistance swapping, and RRAM output parameters are addressed. Then, a brief review of the methods used to enhance the performance of the HfO2-based RRAM devices, problems associated and potential possibilities of RRAM devices is discussed.