Abstract
The demand for higher data density memory structures is greater today than ever before. Multilevel resistive organic memory devices (OMD) provide an ideal solution, in being easily fabricated, cost-effective and at the same time promising high storage capacity. However, conventional methods for multilevel OMDs impose demanding requirements on material properties and attain only limited performance. We hereby provide an alternative design concept that combines multiple switching modes in one device to realize multilevel function. The device possesses a simple structure by using a ferroelectric phase-separated blend as the active layer. Two switching modes, the ferroelectric switching and the metallic filament switching, are realized simultaneously in this device, and enable a ternary storage function. The cross-section scanning electron microscope (SEM) images provide a strong evidence of the formation and annihilation of the metallic filament.
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