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Abstract
In this paper, a split-gate resurf stepped oxide with double floating electrodes (DFSGRSO) U-shape metal oxide semiconductor field-effect transistor (UMOSFET) is proposed. The floating electrodes are symmetrically distributed on both sides of the source electrode in the trench. The performance of the DFSGRSO UMOSFET with different size of floating electrodes is simulated and analyzed. The simulation results reveal that the floating electrodes can modulate the distribution of the electric field in the drift area, improving the performance of the device significantly. The breakdown voltage (BV) and figure of merit (FOM) of the DFSGRSO UMOSFET at optimal parameters are 23.6% and 53.1% higher than that of the conventional structure. In addition, the regulatory mechanism of the floating electrodes is analyzed. The electric field moves from the bottom of the trench to the middle of the drift area, which brings a new electric field peak. Therefore, the distribution of the electric field is more uniform for the DFSGRSO UMOSFET compared with the conventional structure.
Highlights
The power metal oxide semiconductor field-effect transistor (MOSFET) has been playing an important role in the electronic power industry with the development of society
The split-gate resurf stepped oxide (SGRSO) U-shape metal oxide semiconductor field-effect transistor (UMOSFET) [14,15,16,17,18,19] has attracted the attention of researchers, as it adopts the principle of charge-coupling and has a relatively simple preparation process compared with SJ-MOSFET
With P-pillar [21], subsection dielectric layer [22] and slope oxide layer [23], but it is unclear if the control of the slope side oxygen or P-pillar is feasible with the appropriate accuracy in the actual process with a higher breakdown voltage (BV)(BV)
Summary
The power metal oxide semiconductor field-effect transistor (MOSFET) has been playing an important role in the electronic power industry with the development of society. The SJ-MOSFET adopts the principle of charge-coupling, which could increase the doping concentration of the drift area, completely breaking the one-dimensional silicon limit and significantly improving the performance of the device. The conventional structure is shown, whereby the electrode in the trench is connected to the source, which can enhance the depletion of drift area and increase the doping concentration of the epitaxial layer to reduce the RSP of the device. Electronics 2020, 9, 745 enhance the depletion of drift area and increase the doping concentration of the epitaxial layer to reduce the RSP of the device. MOSFET, especially forfor breakdown field in the drift area, a series of measures has been put forward, for example, a split gate UMOSFET with P-pillar [21], subsection dielectric layer [22] and slope oxide layer [23], but it is unclear if the control of the slope side oxygen or P-pillar is feasible with the appropriate accuracy in the actual process.
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