An optimized RESURF LDMOS power device module compatible with advanced logic processes

Efland Efland,Bailey Bailey,Keller Keller,Malhi Malhi,Oh Kyong Kwon Oh Kyong Kwon,Wai Tung Ng Wai Tung Ng,Torreno Torreno

doi:10.1109/iedm.1992.307350

An optimized RESURF LDMOS power device module compatible with advanced logic processes

Efland Efland, Bailey Bailey + Show 5 more

https://doi.org/10.1109/iedm.1992.307350

Copy DOI

Publication Date: Jan 1, 1992

Citations: 48

Affiliation: Texas Instruments (United States)

#Advanced Logic Processes #Voltage Class + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

An advanced optimized RESURF LDMOS device intended for use in low side applications and suitable for integration into advanced CMOS and BiCMOS processes is described. Devices with 84 V and 97 V breakdown voltages have been modeled and fabricated with excellent specific on-resistance performance at CMOS level gate drives. Specific on-resistance of 2.0 m Omega .cm/sup 2/ at 97 V represents the best performance in this voltage class.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.