Abstract
Optimization of the n-region concentration for n-channel MOSFET's with a lightly doped drain (LDD) structure was investigated, based on an analysis of the substrate current characteristics. When a substrate current tailing is observed, which is peculiar to the LDDFET with a low-concentration n-region, a gate current is not observed, which suggests strong resistance against hot-carrier injection. This was confirmed by a bias stress test. The optimized surface concentration for the n-region ranges from 1 × 1018cm-3to 2.5 × 1018cm-3under negligible V TH shift and less than 25-percent driving capability degradation, compared to values for a conventional MOSFET.
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