Abstract
An efficient and reliable MOSFET <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I-V</tex> model parameter extraction program is described. The optimization technique used is a combination of the modified Gauss method and the steepest descent method strategically combined to provide a better convergence property. A proper error function is defined and a good initial guess algorithm is provided to initiate the optimization process. The model subroutine is designed to be independent of the optimizer, so this parameter extraction program can be used for different kinds of technology. Also the program can be used for the extraction of process parameters such as the resistance, width reduction, and length reduction. It is shown that this parameter extraction program is useful for circuit design, process control, and engineering applications.
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