Abstract
An on-line sintering approach was introduced to bond high-temperature IGBT (Insulated gate bipolar transistor) devices using nanosilver paste in an industrial vacuum-reflow furnace. Based on sintering tests, the typical temperature profile and the eliminating method for critical process voids in the furnace were proposed. The IGBT devices was successfully bonded to non-metallized direct bonding copper (DBC) substrates using nanosilver paste. This approach could extend the applications to bonding high-power devices such as SiC or GaN non-metallized DBC substrates and DBC substrates metallized with silver or gold by nanosilver paste, and guide fabricating power modules in a mass productive, low facility costs, and high yield way.
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